MRF5P21045NR1
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
TO-270 WB-4
PLASTIC
H
DATUM
PLANE
BOTTOM VIEW
A1
2X
E3
D1
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
DRAIN LEAD
D
C
A
aaa
M
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M?1994.
3. DATUM PLANE ?H? IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS ?D" AND ?E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS ?D" AND ?E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER?
MINED AT DATUM PLANE ?H?.
5. DIMENSION ?b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE ?b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS ?A? AND ?B? TO BE DETERMINED AT
DATUM PLANE ?H?.
7. DIMENSION A2 APPLIES WITHIN ZONE ?J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1
.039 .043 0.99 1.09
A2
.040 .042 1.02 1.07
D
.712 .720 18.08 18.29
D1
.688 .692 17.48 17.58
D2
.011 .019 0.28 0.48
D3
.600 ? ? ? 15.24 ? ? ?
E
.551 .559 14 14.2
E1
.353 .357 8.97 9.07
E2
.132 .140 3.35 3.56
E3
.124 .132 3.15 3.35
E4
.270 ? ? ? 6.86 ? ? ?
F
b1
.164 .170 4.17 4.32
c1
.007 .011 0.18 0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004 0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
E5
.346 .350 8.79 8.89
相关PDF资料
MRF5P21180HR6 MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21240HR6 MOSFET RF N-CHAN 28V 52W NI-1230
MRF5S19060MR1 MOSFET RF N-CH 28V 12W TO-270-4
MRF5S19060NBR1 MOSFET N-CH 12W 28V TO-272-4
MRF5S19090HSR5 MOSFET RF N-CHAN 28V 18W NI-780S
MRF5S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF5S19130HSR5 MOSFET RF N-CHAN 28V 26W NI-880S
MRF5S19150HSR5 MOSFET RF N-CHAN 28V 32W NI-880S
相关代理商/技术参数
MRF5P21180 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180HR5 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5P21180HR6 功能描述:射频MOSFET电源晶体管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5P21180HR6_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180R6 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21240 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF5P21240HR5 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF5P21240HR6 功能描述:MOSFET RF N-CHAN 28V 52W NI-1230 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR